Critical plasma process issues in the fabrication of thin film transistor liquid crystal displays

Summary form only given. In this paper, the author is going to give a state-of-art review on some key issues in plasma enhanced chemical vapor deposition (PECVD) and reactive ion etching (RIE) for the fabrication of a-Si:H TFT array. The relationship among processes, materials, and devices, as well as the TFT structure, will be discussed. The primary goal is to discuss various subjects related to the large area array fabrication. Challenges in plasma technology for the fabrication of TFT arrays on the ultra-large substrate will be examined. These include the development of new processes and equipment. Researchers in this field are continuously looking for new methods to improve the TFT performance and the production yield.