DocumentCode
1635692
Title
Carbon nanotube nanoelectronics and macroelectronics
Author
Zhou, Chongwu
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fYear
2010
Firstpage
1210
Lastpage
1213
Abstract
Nanotube electronics still faces significant challenges such as integration/assembly, co-existence of metallic and semiconducting nanotubes, and air-stable n-type nanotube transistor for complementary circuit operation. Here we report our solutions to these major obstacles, which may eventually lead to realistic and scalable nanotube integrated circuits. We report the wafer-scale synthesis, transfer of horizontally aligned high-density nanotubes and the application of the high performance aligned nanotube transistors in CMOS integrated circuits. To solve the problem of coexistence of metallic and semiconducting nanotubes, we report a scalable method of fabricating thin-film transistors using pre-separated, semiconducting enriched nanotubes, and have further looked into their application in display electronics. The techniques reported here could serve as critical foundation for future nanotube-based integrated circuits and display electronics.
Keywords
MOSFET; carbon nanotubes; nanoelectronics; nanotube devices; thin film transistors; CMOS integrated circuit; air-stable n-type nanotube transistor; carbon nanotube macroelectronics; carbon nanotube nanoelectronics; complementary circuit operation; display electronics; metallic nanotubes; scalable nanotube integrated circuit; semiconducting nanotubes; thin-film transistor fabrication; wafer-scale synthesis; CMOS integrated circuits; Gold; Nanoscale devices; Organic light emitting diodes; Silicon; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667605
Filename
5667605
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