Mechanisms of nanochannel formation processes: Thermal oxidation of Si nanostructures and graphene formation on SiC

Two topics are introduced from our studies on the formation mechanisms of nanochannels: thermal silicon oxidation to form silicon wire channels, and silicon-carbide thermal decomposition to form atomically thin graphene channels. Silicon emission and oxide viscous flow processes are necessary to explain thermal oxidation to form silicon nanochannels. Interfacial growth should be considered for the epitaxial graphene formation on silicon-carbide substrate.