A novel SOI lateral power device with gradient buried oxide layer

A new SOI lateral high voltage device with gradient buried oxide layer is proposed to achieve uniform lateral surface electric field and high breakdown voltage. The gradient buried oxide layer leads to a linearly increasing drift-region thickness from the anode side to the cathode side, which increases the drift doping concentration and breakdown voltage at the same time. Compared to the conventional RESURF device, Two-dimensional simulations show that the novel device exhibits a large improvement of the figure of merit due to the increased breakdown voltage and reduced drift resistance.