DocumentCode
1635889
Title
A study of switching properties of SI thyristor using high current gate circuit
Author
Kuroda, S. ; Maeyama, M. ; Hotta, E.
Author_Institution
Dept. of Electr. & Electron. Syst., Saitama Univ., Urawa, Japan
Volume
2
fYear
1999
Firstpage
1195
Abstract
The authors are studying the high-speed operation of static induction thyristors (SITs) for the purpose of their application to pulse power generators with pulse forming lines (PFL). As a result, switching time depends on gate voltage, applied voltage to the SIT and on output resistance. In the case of an applied voltage to the SIT of more than 3 kV and an output resistance of 50 ohm, a switching time of 50 ns was obtained. The authors also propose a simulation circuit of the magnetic switch using a trigatron switch.
Keywords
power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; switching; thyristors; SITs; applied voltage; gate voltage; high-current gate circuit; high-speed operation; magnetic switch; output resistance; pulse forming lines; pulse power generators; simulation circuit; static induction thyristors; switching properties; switching time; Circuit simulation; Induction generators; Magnetic circuits; Magnetic switching; Power generation; Pulse generation; Switches; Switching circuits; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-5498-2
Type
conf
DOI
10.1109/PPC.1999.823736
Filename
823736
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