• DocumentCode
    1635889
  • Title

    A study of switching properties of SI thyristor using high current gate circuit

  • Author

    Kuroda, S. ; Maeyama, M. ; Hotta, E.

  • Author_Institution
    Dept. of Electr. & Electron. Syst., Saitama Univ., Urawa, Japan
  • Volume
    2
  • fYear
    1999
  • Firstpage
    1195
  • Abstract
    The authors are studying the high-speed operation of static induction thyristors (SITs) for the purpose of their application to pulse power generators with pulse forming lines (PFL). As a result, switching time depends on gate voltage, applied voltage to the SIT and on output resistance. In the case of an applied voltage to the SIT of more than 3 kV and an output resistance of 50 ohm, a switching time of 50 ns was obtained. The authors also propose a simulation circuit of the magnetic switch using a trigatron switch.
  • Keywords
    power semiconductor switches; pulse generators; pulsed power supplies; pulsed power switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; switching; thyristors; SITs; applied voltage; gate voltage; high-current gate circuit; high-speed operation; magnetic switch; output resistance; pulse forming lines; pulse power generators; simulation circuit; static induction thyristors; switching properties; switching time; Circuit simulation; Induction generators; Magnetic circuits; Magnetic switching; Power generation; Pulse generation; Switches; Switching circuits; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-5498-2
  • Type

    conf

  • DOI
    10.1109/PPC.1999.823736
  • Filename
    823736