Formation and electrical properties of metal/Ge1−xSnx contacts

Author

Nakatsuka, Osamu ; Nishimura, T. ; Suzuki, A. ; Kato, Kazuhiko ; Yunsheng, Deng ; Kurosawa, Masashi ; Takeuchi, Wataru ; Sakashita, Mitsuo ; Taoka, Noriyuki ; Zaima, Shigeaki

Author_Institution

Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan

fYear

2014

fDate

18-20 May 2014

Firstpage

1

Lastpage

4

Abstract

We have investigated the crystalline structure of Ni germanostanane/Ge_1-x Sn_x contacts. Uniform Ni(Ge_1-xSn_x) layers on Ge_1-xSn_x can be formed with solid phase reaction by annealing Ni/G_1-xSn_x/Ge samples at 350°C. However, severe agglomeration and Sn precipitation from Ni(Ge_1-xSn_x) layers are observed after annealing at above 450 °C. We have also investigated the electrical properties of an Sn/n-Ge Schottky contact prepared at room temperature. Sn electrode exhibits the possibility of the alleviation of Fermi level pining phenomena for metal/n-Ge contacts.

Keywords

Schottky barriers; annealing; crystal structure; electric properties; germanium compounds; nickel; Fermi level pining phenomena; Ni-Ge_1-xSn_x; Schottky contact; crystalline structure; electrical properties; germanostanane; solid phase reaction; temperature 293 K to 298 K; temperature 350 degC; tin electrode; tin precipitation; Annealing; Contacts; Gold; Nickel; Temperature measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2014 International Workshop on

Conference_Location

Shanghai

Type

conf

DOI

10.1109/IWJT.2014.6842039

Filename

6842039