Ion beam technologies for the 20nm technology node, 450mm wafer processes, and beyond

An innovative ion beam line capable of high ion beam current production, excellent ion mass resolving power, minimal energy contamination for sub-keV ion beams, all while maintaining high degrees of beam intensity and angle uniformity, has been designed and developed to meet ion implantation process and productivity requirements of the 20nm technology node (and beyond) and of 450mm wafers. The testing results have demonstrated that the beam line´s performance meets the required specifications in terms of ion beam current, energy purity and beam uniformities. The detailed designs and measured performance results are presented in this paper.