Plasma source ion implantation of argon for shallow boron doping

Summary form only given. A recoil implantation technique is investigated for ultra-shallow p+/n junction formation, which is one of the biggest challenges for submicron CMOS technology. In this method, a thin boron layer is first sputtered onto the Si wafer. Then -3kV argon Plasma Source Ion Implantation (PSII) drives the boron atoms into the Si substrate by means of ion beam mixing. The remainder of the boron film is chemically etched away prior to the rapid thermal annealing (RTA) step. The effects of process parameters, such as boron film thickness, Ar dose, and anneal temperature, on the junction characteristics are studied.