DocumentCode :
163594
Title :
Cluster molecule implantation for ultra shallow junction — A review
Author :
Sekar, K. ; Onoda, Hiroshi ; Nakashima, Yuta
Author_Institution :
Nissin Ion Equip. USA Inc., Billerica, MA, USA
fYear :
2014
fDate :
18-20 May 2014
Firstpage :
1
Lastpage :
6
Abstract :
Molecular Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 20nm node and beyond with stringent requirements for ultra-shallow depths and very low thermal budgets. We present here the review of molecular cluster ion (like B18H22, C7H7, C16H10 species) advantages with their special property of creating self-amorphous layer even at a lower dose and other activation properites with various anneal techniques. This article will review various results obtained so far using molecular cluster ion implantation for different applications.
Keywords :
amorphisation; boron compounds; carbon compounds; doping profiles; ion implantation; molecular clusters; semiconductor junctions; B18H22; C16H10; C7H7; activation properties; anneal techniques; molecular cluster ion implantation; self-amorphous layer; semiconductor devices; ultra-shallow depths; ultra-shallow junction; very low thermal budgets; Annealing; Atomic layer deposition; Boron; Carbon; Implants; Junctions; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2014 International Workshop on
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/IWJT.2014.6842041
Filename :
6842041
Link To Document :
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