A novel planar-type body-connected FinFET device fabricated by self-align isolation-last process

A new planar-type body-connected FinFET structure produced by the isolation-last self-align process is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. The new process step first defines the gate region and then the active region, thus it can achieve fully self-alignment undoubtedly. Besides, due to the isolation-last process (ILP), an additional body region (ABR) is exhibited under the gate region thereby improving the device electrical characteristics and the subthreshold properties. Its DIBL and subthreshold swing becomes better compared with its counterpart because the lower source/drain resistance and the wider device effective-width can be obtained. For the same reason, this new device shows a higher transconductance (G_M) behavior. And its drain conductance (G_D) also maintains a good electrical performance with no kink effect compared with the planar-type single top-gate FinFET. With ABR under the gate layer, the lattice temperature is decreased and the thermal instability is alleviated compared with its counterpart.