Title :
Applications of tunneling FET in memory devices
Author :
Zang, Song-Gan ; Liu, Xin-Yan ; Lin, Xi ; Liu, Lei ; Liu, Wei ; Zhang, David Wei ; Wang, Peng-Fei ; Hansch, Walter
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory cells containing TFET will be discussed.
Keywords :
DRAM chips; MOSFET; p-i-n diodes; tunnelling; MOSFET; TFET; capacitor-less DRAM cell; composite transistor; floating junction gate; memory device; p-i-n structure; tunneling FET; Junctions; Logic gates; MOSFET circuits; Nonvolatile memory; PIN photodiodes; Random access memory; System-on-a-chip;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667617
