DocumentCode :
1635968
Title :
Mathematical model of transistor equivalent of electrical controlled capacity
Author :
Osadchuk, Alexandr ; Koval, Kostyantun ; Semenov, Andriy ; Prutyla, Maxim
Author_Institution :
Vinnitsa Nat. Tech. Univ., Vinntsa, Ukraine
fYear :
2008
Firstpage :
35
Lastpage :
36
Abstract :
This work the mathematical model of transistor equivalent of electrical controlled capacity based on two bipolar transistors are made. Associations of active and reactive component complete resistance with changeable temperature.
Keywords :
bipolar transistors; electric resistance; mathematical analysis; semiconductor device models; bipolar transistors; changeable temperature; electrical controlled capacity; mathematical model; resistance; complete resistance; electrical controlled capacity; negative differentiating resistance; transistor equivalent;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2008 Proceedings of International Conference on
Conference_Location :
Lviv-Slavsko
Print_ISBN :
978-966-553-678-9
Type :
conf
Filename :
5423378
Link To Document :
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