Title :
An improved but reliable model for MESFET parasitic capacitance extraction
Author :
Ooi, B.L. ; Ma, J.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The conventional parasitic capacitance extraction always produces bias-dependent C/sub pd/, even though from the underlying physics, the parasitic capacitance is known to be bias-independent. In this paper, an improved model is thus proposed to evaluate the parasitic capacitances of a GaAs MESFET from the cold-FET S-parameters measurement. The resulting C/sub pd/ is found to be independent of V/sub gs/ when V/sub gs/\n\n\t\t
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; capacitance; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; GaAs MESFET; MESFET parasitic capacitance extraction; S-parameter measurement; cold-FET S-parameters; small signal equivalent circuit; transistor S-parameters; Capacitance measurement; Capacitors; Equivalent circuits; Frequency; Joining processes; MESFET circuits; Microwave devices; Parasitic capacitance; Physics; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211032
