RF circuit design in reliability

Author

Enjun Xiao ; Yuan, J.S.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA

Volume

1

fYear

2003

Abstract

A methodology for designing reliable RF circuits is proposed. A model to predict hot carrier and soft breakdown effects on CMOS device parameters in RF circuits is developed. Hot carrier and soft breakdown effects are evaluated experimentally with 0.16 /spl mu/m CMOS technology. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low noise amplifier and voltage-controlled oscillator performance. Two design techniques to build reliable RF circuits are proposed and verified.

Keywords

CMOS integrated circuits; hot carriers; integrated circuit design; integrated circuit reliability; radiofrequency amplifiers; radiofrequency integrated circuits; radiofrequency oscillators; semiconductor device breakdown; voltage-controlled oscillators; 0.16 micron; CMOS device parameters; CMOS technology; LNA performance; RF circuit design; RFICs; SpectreRF simulation; VCO performance; design methodology; device stress measurement; hot carrier effects prediction; low noise amplifier; reliable RF circuits; soft breakdown effects prediction; voltage-controlled oscillator; CMOS technology; Circuit simulation; Circuit synthesis; Design methodology; Electric breakdown; Hot carriers; Predictive models; Radio frequency; Semiconductor device modeling; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1211034

Filename

1211034