Title :
The EL properties of well-aligned n-ZnO nanorods / p-GaN structure
Author :
Liu, Shu-Yi ; Wu, Jia-Hong ; Li, Shu-Ti ; Chen, Tao ; Deng, Shao-Ren ; Jiang, Yu-Long ; Ru, Guo-Ping ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase the carrier injection efficiency of the n-ZnO nanorods/p-GaN LED device.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; nanorods; zinc compounds; GaN; I-V characteristic; ZnO; carrier injection efficiency; electroluminescence property; forward bias; hydrothermal method; n-ZnO nanorods; nanorod LED device; nanosized junction; p-GaN heterojunction LED structures; reverse bias; Arrays; Films; Gallium nitride; Light emitting diodes; Nanoscale devices; Substrates; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667620
