Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Author

Liu, Guang-Yuan ; Ma, Zhong-Yuan ; Chen, Kun-Ji ; Fang, Zhong-Hui ; Qian, Xin-Ye ; Jiang, Xiao-Fan ; Zhang, Xian-Gao ; Huang, Xin-Fan

Author_Institution

State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China

fYear

2010

Firstpage

1250

Lastpage

1252

Abstract

Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface states density and charge density, the role of nc-Si and interface states is analyzed in detail.

Keywords

MOS integrated circuits; capacitance measurement; electric admittance measurement; elemental semiconductors; frequency measurement; silicon; voltage measurement; Si; capacitance-voltage measurements; charge density; floating gate MOS structures; frequency dependent conductance-voltage measurements; interface states density; nc-dots induced charging-discharging effects; Annealing; Capacitance-voltage characteristics; Frequency measurement; Hysteresis; Interface states; Logic gates; Nonvolatile memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667623

Filename

5667623