Floating dynamic access technology

A dual gate cell with double injection one-transistor dynamic access structure is proposed. Based on the change of potential, using the floating effect, the cell works on high injection efficiency and low read-out time. The character of the dual gate cell with double injection is found to be better than the single injection cell using a two-dimensional simulator. The development history of the dynamic access cell based on a MOS structure is introduced; this is considered to decrease the chip area and to improve the integration level. The DRAM cell structure changes from the original four-transistor structure to a three-transistor structure, and to the mature product structure - one transistor and one capacitor (1T/1C). So far, the study has focused on the one-transistor structure.