Short-range interaction affecting transport properties of two-dimensional electron Gas with nearby embedded self-assembled GaSb/GaAs type-II quantum dots

Author

Li, Guodong ; Yin, Hong ; Jiang, Chao

Author_Institution

Nat. Center for Nanosci. & Technol., Beijing, China

fYear

2010

Firstpage

1253

Lastpage

1255

Abstract

We report on study of the scattering mechanisms in the system of AlGaAs/GaAs two-dimensional electron gas (2DEG) with nearby embedded GaSb/GaAs type-II quantum dots (QDs), which directly affect its transport properties. Mobilities were measured as functions of electron density N_2D in the QDs contained sample and reference sample at 4.2K, respectively. In the framework of Born approximation, a short-range scattering model of GaSb QDs considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data.

Keywords

III-V semiconductors; aluminium compounds; approximation theory; electro-optical devices; electron gas; gallium arsenide; quantum dots; Born approximation; GaSb-GaAs; quantum dots; rectangular-shaped potential; scattering mechanisms; transport properties; two-dimensional electron gas; Approximation methods; Electric potential; Gallium arsenide; Quantum dot lasers; Quantum dots; Scattering; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667625

Filename

5667625