• DocumentCode
    1636205
  • Title

    Symmetric 3D passive components for RF ICs application

  • Author

    Wei-Zen Chen ; Wen-Hui Chen

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
  • Volume
    1
  • fYear
    2003
  • Abstract
    This paper proposes novel 3-D symmetric RF passive components, including inductors, transformers, and baluns. Layout areas of these components are drastically reduced by means of stacked structure while the symmetry of input and output ports is also maintained. The area saving of a 3-D inductor is up 70%. The 1:1 transformer shows less than 0.1 % inductance mismatch in a 18 GHz range, and K is up to 0.87 at 17 GHz. The 3-D balun manifests less than 0.8 dB gain mismatch from 5.25 GHz to 6 GHz and phase error is about 4/spl deg/ at 5.25 GHz according to measurement results. All the components are fabricated in a 0.18 /spl mu/m standard CMOS process.
  • Keywords
    CMOS integrated circuits; Q-factor; baluns; high-frequency transformers; inductors; integrated circuit layout; radiofrequency integrated circuits; 0.18 micron; 3D baluns; 3D inductors; 3D symmetric passive components; 3D transformers; 5.25 to 18 GHz; CMOS process; RF passive components; RFIC application; layout area reduction; stacked structure; CMOS technology; Component architectures; Impedance matching; Inductance; Inductors; Mutual coupling; Radio frequency; Radiofrequency integrated circuits; Transformers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2003 IEEE MTT-S International
  • Conference_Location
    Philadelphia, PA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7695-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2003.1211040
  • Filename
    1211040