DocumentCode
1636205
Title
Symmetric 3D passive components for RF ICs application
Author
Wei-Zen Chen ; Wen-Hui Chen
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Volume
1
fYear
2003
Abstract
This paper proposes novel 3-D symmetric RF passive components, including inductors, transformers, and baluns. Layout areas of these components are drastically reduced by means of stacked structure while the symmetry of input and output ports is also maintained. The area saving of a 3-D inductor is up 70%. The 1:1 transformer shows less than 0.1 % inductance mismatch in a 18 GHz range, and K is up to 0.87 at 17 GHz. The 3-D balun manifests less than 0.8 dB gain mismatch from 5.25 GHz to 6 GHz and phase error is about 4/spl deg/ at 5.25 GHz according to measurement results. All the components are fabricated in a 0.18 /spl mu/m standard CMOS process.
Keywords
CMOS integrated circuits; Q-factor; baluns; high-frequency transformers; inductors; integrated circuit layout; radiofrequency integrated circuits; 0.18 micron; 3D baluns; 3D inductors; 3D symmetric passive components; 3D transformers; 5.25 to 18 GHz; CMOS process; RF passive components; RFIC application; layout area reduction; stacked structure; CMOS technology; Component architectures; Impedance matching; Inductance; Inductors; Mutual coupling; Radio frequency; Radiofrequency integrated circuits; Transformers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1211040
Filename
1211040
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