Title :
A breakdown model of RESURF SOI device with multi-regions fixed interface charges
Author :
Zhang, Bo ; Guo, Yufeng ; Li, Zhaoji ; Luo, Xiaorong ; Fang, Jian
Author_Institution :
Integrated Circuit Design Center, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new breakdown model of a SOI high voltage device with multi-region fixed interface charges (MUFIC) is first proposed. Based on the model, the impact of the distribution of interface charges on the 2D profiles of the electric field is researched in detail. The lateral and vertical breakdown voltages are discussed for the different structure parameters. A good agreement between the analytical model and the numerical results shows that the MUFIC structure breaks through the limitation of the vertical breakdown voltage of the conventional SOI structure and increases sharply the electric field of the buried oxide from 75V/μm to 600V/μm. At the same time, an optimum trade-off between the concentration of the doping and breakdown voltage is obtained due to the uniform surface electric field modulated by the step fixed interface charges.
Keywords :
electric field gradient; semiconductor device breakdown; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon-on-insulator; RESURF SOI device; SOI high voltage device; breakdown voltage; doping concentration; electric field; interface charge distribution; multi-region fixed interface charges; surface electric field; Analytical models; Breakdown voltage; Dielectric constant; Doping; Electric breakdown; Integrated circuit synthesis; Integrated circuit technology; Poisson equations; Silicon; Substrates;
Conference_Titel :
Communications, Circuits and Systems, 2004. ICCCAS 2004. 2004 International Conference on
Print_ISBN :
0-7803-8647-7
DOI :
10.1109/ICCCAS.2004.1346463
