Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices

Author

Pasini, L. ; Sklenard, B. ; Batude, P. ; Casse, M. ; Rivallin, P. ; Previtali, B. ; Fenouillet-Beranger, C. ; Haond, M. ; Ghibaudo, Gerard ; Vinet, M.

Author_Institution

CEA LETI, Grenoble, France

fYear

2014

fDate

18-20 May 2014

Firstpage

1

Lastpage

4

Abstract

This work gives insights on the performance levers to optimize nFET Fully Depleted Silicon On Insulator sheet resistance with low temperature activation. Optimum dopant concentration, i.e clusterization limit for arsenic and phosphorus activated at 600°C has been extracted. This study shows that phosphorus appears to be the best candidate for nFET low temperature doping. Solid Phase Epitaxial Regrowth at 600°C enables to reach activation levels identical to the thermodynamic equilibrium at 1050°C.

Keywords

doping profiles; field effect transistors; silicon-on-insulator; solid phase epitaxial growth; nFET low temperature fully depleted silicon on insulator devices; optimum dopant concentration; solid phase epitaxial regrowth; temperature 1050 degC; temperature 600 degC; thermodynamic equilibrium; Annealing; Junctions; Optimization; Resistance; Semiconductor process modeling; Solids; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2014 International Workshop on

Conference_Location

Shanghai

Type

conf

DOI

10.1109/IWJT.2014.6842057

Filename

6842057