Title :
Current analysis of dual quantum dot transistor based on Schrödinger equation
Author :
Fujihashi, Chugo
Author_Institution :
Dept. of Appl. Comput. Sci., Tokyo Polytech. Univ., Atsugi, Japan
Abstract :
The specific property of the dual quantum dot transistor is that the current is strongly controlled by resonance tunneling between two quantum states in both dots. The property is analyzed clearly by the method based on Schrödinger equation for an electron in the dot and stochastic theory.
Keywords :
Schrodinger equation; resonant tunnelling; semiconductor quantum dots; stochastic processes; transistors; Schrodinger equation; dual quantum dot transistor; resonance tunneling; stochastic theory; Energy states; Equations; Mathematical model; Quantum computing; Quantum dots; Transistors; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667628
