DocumentCode
1636376
Title
Thin film RCG notch filter modelling
Author
Ali, Luoman S. ; Ahmed, Hussan A.
Author_Institution
Dept. of Electr. Eng., Mosul Univ., Iraq
fYear
1991
Firstpage
75
Abstract
A mathematical model representing the Al-CdS-SiO-NiCr thin-film RCG structures is derived. This model takes into account the distributed leakage conductance through the CdS semi-insulating layer or through the CdS-SiO composite dielectric layer. Exponential tapered notch filters with both types of structures Al-CdS-NiCr and Al-CdS-SiO-NiCr having the same length and tapering coefficient are modeled and characterized. The composite dielectric CdS-SiO layer leads to a decreased leakage conductance, and this results in an improved performance
Keywords
aluminium; cadmium compounds; chromium alloys; leakage currents; linear network analysis; nickel alloys; notch filters; silicon compounds; Al-CdS-NiCr; Al-CdS-SiO-NiCr; composite dielectric layer; distributed leakage conductance; exponential tapered notch filters; mathematical model; tapering coefficient; thin film RCG notch filter; Capacitance; Circuits; Dielectric thin films; Differential equations; Filters; Frequency; Partial differential equations; Steady-state; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location
LJubljana
Print_ISBN
0-87942-655-1
Type
conf
DOI
10.1109/MELCON.1991.161782
Filename
161782
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