• DocumentCode
    1636376
  • Title

    Thin film RCG notch filter modelling

  • Author

    Ali, Luoman S. ; Ahmed, Hussan A.

  • Author_Institution
    Dept. of Electr. Eng., Mosul Univ., Iraq
  • fYear
    1991
  • Firstpage
    75
  • Abstract
    A mathematical model representing the Al-CdS-SiO-NiCr thin-film RCG structures is derived. This model takes into account the distributed leakage conductance through the CdS semi-insulating layer or through the CdS-SiO composite dielectric layer. Exponential tapered notch filters with both types of structures Al-CdS-NiCr and Al-CdS-SiO-NiCr having the same length and tapering coefficient are modeled and characterized. The composite dielectric CdS-SiO layer leads to a decreased leakage conductance, and this results in an improved performance
  • Keywords
    aluminium; cadmium compounds; chromium alloys; leakage currents; linear network analysis; nickel alloys; notch filters; silicon compounds; Al-CdS-NiCr; Al-CdS-SiO-NiCr; composite dielectric layer; distributed leakage conductance; exponential tapered notch filters; mathematical model; tapering coefficient; thin film RCG notch filter; Capacitance; Circuits; Dielectric thin films; Differential equations; Filters; Frequency; Partial differential equations; Steady-state; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
  • Conference_Location
    LJubljana
  • Print_ISBN
    0-87942-655-1
  • Type

    conf

  • DOI
    10.1109/MELCON.1991.161782
  • Filename
    161782