Title :
A 2.45 GHz wide tuning range VCO using MOS varactor in 0.35 /spl mu/m SiGe BiCMOS technology
Author_Institution :
Actel Corp., Sunnyvale, CA
Abstract :
A full monolithic low-phase-noise wide-tuning-range voltage-control-oscillator (VCO) designed for a dual-band homodyne transceiver for WLAN applications is presented in this paper. The circuit is designed and implemented in a commercial 0.35 SiGe BiCMOS process. MOS varactor is used to realize a wide tuning range. Measured VCO circuit specifications feature a 440 MHz tuning range around 2.45 GHz, phase noise of -110 dBc/Hz at 1 MHz offset and -106 dBc/Hz at 600 KHz, out power of 7.68 dBm and power dissipation of 6.8 mA with 3 V supplies
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF oscillators; circuit tuning; semiconductor materials; transceivers; varactors; voltage-controlled oscillators; wireless LAN; 0.35 mum; 2.45 GHz; 3 V; 6.8 mA; BiCMOS technology; MOS varactor; SiGe; WLAN applications; dual-band homodyne transceiver; monolithic low-phase-noise VCO; voltage-control-oscillator; wide tuning range VCO; BiCMOS integrated circuits; Circuit optimization; Dual band; Germanium silicon alloys; Silicon germanium; Transceivers; Varactors; Voltage; Voltage-controlled oscillators; Wireless LAN; MOS varactor; SiGe; VCO; Voltage controlled oscillator; wide tuning range;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1617826
