Title :
Ku-band low noise amplifier with using short-stub ESD protection
Author :
Chang-Kun Park ; Min-Gun Kim ; Chung-Han Kim ; Songcheol Hong
Author_Institution :
Dept. Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
A Ku-band ESD-protected low noise amplifier is designed using 0.15um pHEMT process. The input ESD protection is implemented with short-circuited stub. Since a short-circuited stub is used as an ESD protection as well as a matching element, there are no additional components and parasitic components associated with ESD protection. This endures 4400V (ESD tester limit) HBM test signal. The LNA has the noise figure of 1.24 dB and 24.5 dB gain at the frequency of 11.7-12.75 GHz.
Keywords :
HEMT integrated circuits; MMIC amplifiers; electrostatic discharge; field effect MMIC; protection; 0.15 micron; 1.24 dB; 11.7 to 12.75 GHz; 24.5 dB; 4400 V; ESD protection; HBM test signal; Ku-band low noise amplifier; PHEMT MMIC; matching element; short-circuited stub; Biological system modeling; Circuit testing; Electrostatic discharge; Low-noise amplifiers; MMICs; Protection; Radio frequency; Semiconductor device noise; Silicon; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211058
