DocumentCode
1636592
Title
Ku-band low noise amplifier with using short-stub ESD protection
Author
Chang-Kun Park ; Min-Gun Kim ; Chung-Han Kim ; Songcheol Hong
Author_Institution
Dept. Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
1
fYear
2003
Abstract
A Ku-band ESD-protected low noise amplifier is designed using 0.15um pHEMT process. The input ESD protection is implemented with short-circuited stub. Since a short-circuited stub is used as an ESD protection as well as a matching element, there are no additional components and parasitic components associated with ESD protection. This endures 4400V (ESD tester limit) HBM test signal. The LNA has the noise figure of 1.24 dB and 24.5 dB gain at the frequency of 11.7-12.75 GHz.
Keywords
HEMT integrated circuits; MMIC amplifiers; electrostatic discharge; field effect MMIC; protection; 0.15 micron; 1.24 dB; 11.7 to 12.75 GHz; 24.5 dB; 4400 V; ESD protection; HBM test signal; Ku-band low noise amplifier; PHEMT MMIC; matching element; short-circuited stub; Biological system modeling; Circuit testing; Electrostatic discharge; Low-noise amplifiers; MMICs; Protection; Radio frequency; Semiconductor device noise; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1211058
Filename
1211058
Link To Document