A pseudo-concurrent 0.18 /spl mu/m multi-band CMOS LNA

Author

Lavasani, S.H.M. ; Chaudhuri, B. ; Kiaei, S.

Author_Institution

Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA

Volume

1

fYear

2003

Abstract

A novel multi-band LNA, which can switch between standards GSM800MHz/GSM1.8GHz or GSM800MHz/WCDMA2.1GHz, is presented. The LNA provides 22.4 dB gain at 800 MHz and 14.1 dB at 1.8 GHz. The device selects between GSM1.8GHz/WCDMA2.1GHz by means of a simple PMOS switch. The LNA is fabricated in 0.18 /spl mu/m technology using only CMOS transistors. Post-layout simulation results indicate a noise figure below 1.6 dB in all bands while drawing 8.5 mA from a 1.8 V power supply. To save die area, the input matching circuit is partially off-chip.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; impedance matching; integrated circuit design; integrated circuit noise; mobile radio; 0.18 micron; 1.6 dB; 1.8 GHz; 1.8 V; 14.1 dB; 2.1 GHz; 22.4 dB; 8.5 mA; 800 MHz; CMOS transistors; PMOS switch; input matching circuit; multi-band CMOS LNA; pseudo-concurrent multi-band LNA; standards; Band pass filters; Filtering theory; Frequency; Impedance matching; Inductors; Noise figure; Noise measurement; Poles and zeros; Transfer functions; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1211064

Filename

1211064