Detecting the interface state of organic thin-film transistors through hysteresis characteristics

Author

Ji, Zhuoyu ; Zhen, Lijuan ; Shang, Liwei ; Liu, Ming ; Wang, Hong ; Liu, Xin ; Han, Maixing

Author_Institution

Lab. of Nano-fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

fYear

2010

Firstpage

1295

Lastpage

1297

Abstract

Under white-light irradiation, thin film transistors based on copper phthalocyanine (CuPc) exhibited obvious hysteresis effects when applying bi-directional sweeping gate voltage, the hysteresis window comes up to 32 V. This hysteresis effect is the result of those accumulated photogenerated carriers trapped in the interface, which proposed a feasible way to detect the state of the interface between organic functional materials and the dielectric layer.

Keywords

dielectric hysteresis; interface states; organic semiconductors; radiation effects; thin film transistors; bidirectional sweeping gate voltage; copper phthalocyanine; dielectric layer; hysteresis characteristics; hysteresis effect; hysteresis window; interface state; organic functional material; organic thin-film transistor; photogenerated carrier; white-light irradiation; Dielectrics; Electron traps; Hysteresis; Interface states; Logic gates; Semiconductor device measurement; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667641

Filename

5667641