Title :
Implanted doping profile engineering design for manufacturability
Author :
Kau, DC ; Steeples, K. ; Andreoli, M. ; Podbevsek, A. ; Tower, B. ; Bouchard, D.
Author_Institution :
Semicond. Oper., Digital Equipment Corp., Hudson, MA, USA
Abstract :
Summary form only given. Doping Profile Engineering (DPE) plays a significant role in optimizing the performance of sub-half micron devices in today´s densely packed integrated circuits. Profiles have been carefully engineering for: shallow degenerated junctions; highly non-uniform lateral/vertical channel profiles, and (multiple) retrograde profiles for isolation technology. The implanters designed to fulfil the above requirement must be able to perform large angle tilt/twist implant
Keywords :
ion implantation; design for manufacturability; doping profile engineering; integrated circuits; isolation technology; large angle tilt/twist implant; multiple retrograde profiles; nonuniform lateral/vertical channel profiles; shallow degenerated junctions; sub-half micron devices; Design engineering; Digital integrated circuits; Doping profiles; Implants; Integrated circuit technology; Isolation technology; Manufacturing; Poles and towers; Semiconductor device manufacture; Ultra large scale integration;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-2053-0
DOI :
10.1109/ASMC.1994.588173
