Implanted doping profile engineering design for manufacturability

Author

Kau, DC ; Steeples, K. ; Andreoli, M. ; Podbevsek, A. ; Tower, B. ; Bouchard, D.

Author_Institution

Semicond. Oper., Digital Equipment Corp., Hudson, MA, USA

fYear

1994

Firstpage

37

Abstract

Summary form only given. Doping Profile Engineering (DPE) plays a significant role in optimizing the performance of sub-half micron devices in today´s densely packed integrated circuits. Profiles have been carefully engineering for: shallow degenerated junctions; highly non-uniform lateral/vertical channel profiles, and (multiple) retrograde profiles for isolation technology. The implanters designed to fulfil the above requirement must be able to perform large angle tilt/twist implant

Keywords

ion implantation; design for manufacturability; doping profile engineering; integrated circuits; isolation technology; large angle tilt/twist implant; multiple retrograde profiles; nonuniform lateral/vertical channel profiles; shallow degenerated junctions; sub-half micron devices; Design engineering; Digital integrated circuits; Doping profiles; Implants; Integrated circuit technology; Isolation technology; Manufacturing; Poles and towers; Semiconductor device manufacture; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI

Conference_Location

Cambridge, MA

Print_ISBN

0-7803-2053-0

Type

conf

DOI

10.1109/ASMC.1994.588173

Filename

588173