Simple 1/f noise parameter extraction method for high-voltage MOSFETs

A 1/f noise parameter extraction method for high-voltage (HV-)MOSFETs at 3V drain bias is presented in this paper. In this region the overall noise is mostly dominated by the noise originating in the channel. The bias dependence of flicker noise, related to transconductance-to-current ratio, allows for an easy means to determine related noise parameters. Though measured data is limited, parameters related to carrier number fluctuation effect may be found. 50 V N-channel HV-MOSFETs are investigated for long as well as short channel lengths. The parameter extraction method is applied to a recently established 1/f noise model for HV-MOSFETs, showing a good agreement among model and experimental data.