Title :
Characterization of semi-insulating (SI) GaAs as photoconductive switch material for high power, UWB microwave applications
Author :
Islam, Naz E. ; Schamiloglu, Edl ; Fleddermann, C.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. A Photoconductive Semiconductor Switch (PCSS) based on SI GaAs material and used as a component of a pulse shaping network, has been studied using a 2-3 D semiconductor device and materials simulation code. Simulations include device characteristics at low and very high bias conditions, determination of hold-off voltage, role of traps in the transport mechanism, and the device response mechanism with changes in such parameters as carrier lifetime, trap captures cross-section, etc. Deviations from known characteristics of "lifetime" material were evident and, as expected, results did not display all known characteristics of "relaxation" materials.
Keywords :
III-V semiconductors; carrier lifetime; carrier relaxation time; gallium arsenide; microwave devices; photoconducting switches; 2-3 D semiconductor device and materials simulation code; GaAs; GaAs semiconductor; PCSS; bias conditions; carrier lifetime; device characteristics; device response mechanism; equilibrium conditions; high power UWB microwave applications; hold-off voltage; initial conduction phase; lifetime material; mixed mode simulations; photoconductive switch material; pulse shaping network; relaxation materials; relaxation semiconductors; secondary breakdown mechanism; semi-insulating GaAs; transport mechanism; trap capture cross-section; traps; Charge carrier lifetime; Gallium arsenide; Photoconducting devices; Photoconducting materials; Photoconductivity; Pulse shaping methods; Semiconductor devices; Semiconductor materials; Switches; Voltage;
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
Print_ISBN :
0-7803-4792-7
DOI :
10.1109/PLASMA.1998.677763
