Submicron-channel InGaAs MISFET with epitaxially grown source

We would like to report our approaches to realize epitaxially grown source toward high drain current in III-V MISFET. One approach is an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When gate length of 150 nm was fabricated, I_d at V_d = 0.8 V was 0.8 A/mm and maximum gm was 0.38 S/mm at V_d = 0.5 V. The other approach is vertical FET. In case of vertical FET with dual gate, shrinking the mesa width of channel region is important for high speed operation. Thus we introduced undercut etching after fabrication of the mesa. In fabricated device, the width of channel mesa was 15 nm. Channel length was 60 nm. Observed drain current density at V_d = 0.75 V was 1.1 A/mm. Maximum g_m was 0.53 S/mm.