• DocumentCode
    1636937
  • Title

    A 128Mb multi port media DRAM with four independent 4Gb/s serial ports

  • Author

    Lee, Seunghoon ; Kwon, Kee-Won ; Kim, Changhyun ; Lee, Dongyun ; Shin, John ; Cho, Soo-In

  • Author_Institution
    Samsung Electron. Co., Hwasung, South Korea
  • fYear
    2004
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    This paper proposes a 128-Mb multimedia-specific DRAM having 4 independent 4Gbps serial ports, 16 independent banks, and 512b I/O bus. The core bandwidth of 51.2-Gbps is fully utilized by the four independent RX-TX 4-Gbps serial ports. The over-sampling clock/data recovery, boosted column select, and data-line redundancy schemes realize high-speed data path. It is fabricated using 1.8V, 0.10μm standard DRAM technology.
  • Keywords
    DRAM chips; redundancy; 0.10 micron; 1.8 V; 128 Mbit; 128Mb multi port media DRAM; 4 Gbit/s; core bandwidth; four independent 4Gb/s serial ports; over-sampling clock/data recovery; Assembly; Bandwidth; Circuits; Clocks; Communication system control; Decoding; Frequency; Logic; Random access memory; Streaming media;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8287-0
  • Type

    conf

  • DOI
    10.1109/VLSIC.2004.1346492
  • Filename
    1346492