DocumentCode :
1636937
Title :
A 128Mb multi port media DRAM with four independent 4Gb/s serial ports
Author :
Lee, Seunghoon ; Kwon, Kee-Won ; Kim, Changhyun ; Lee, Dongyun ; Shin, John ; Cho, Soo-In
Author_Institution :
Samsung Electron. Co., Hwasung, South Korea
fYear :
2004
Firstpage :
34
Lastpage :
35
Abstract :
This paper proposes a 128-Mb multimedia-specific DRAM having 4 independent 4Gbps serial ports, 16 independent banks, and 512b I/O bus. The core bandwidth of 51.2-Gbps is fully utilized by the four independent RX-TX 4-Gbps serial ports. The over-sampling clock/data recovery, boosted column select, and data-line redundancy schemes realize high-speed data path. It is fabricated using 1.8V, 0.10μm standard DRAM technology.
Keywords :
DRAM chips; redundancy; 0.10 micron; 1.8 V; 128 Mbit; 128Mb multi port media DRAM; 4 Gbit/s; core bandwidth; four independent 4Gb/s serial ports; over-sampling clock/data recovery; Assembly; Bandwidth; Circuits; Clocks; Communication system control; Decoding; Frequency; Logic; Random access memory; Streaming media;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
Type :
conf
DOI :
10.1109/VLSIC.2004.1346492
Filename :
1346492
Link To Document :
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