DocumentCode :
163697
Title :
Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors
Author :
Sheredeko, Galina S. ; Zemtsov, Kirill S. ; Zebrev, Gennady I.
Author_Institution :
Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ., Moscow, Russia
fYear :
2014
fDate :
12-14 May 2014
Firstpage :
107
Lastpage :
109
Abstract :
Analytical modeling of double gated field-effect transistor with conductive channel based on monolayer molybdenite (MoS2) is presented.
Keywords :
electrostatics; field effect transistors; molybdenum compounds; MoS2; conductive channel; double gated field-effect transistors; electrostatic modeling; monolayer channel field-effect transistors; monolayer molybdenite; Chemicals; Electrostatics; Field effect transistors; Logic gates; Quantum capacitance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
Type :
conf
DOI :
10.1109/MIEL.2014.6842097
Filename :
6842097
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=163697
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