Title :
Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application
Author :
Zhang, Minglan ; Wang, Xiaoliang ; Peng, Mingzeng ; Liu, Xinyu ; Wang, Ru
Abstract :
High breakdown voltage GaN HEMTs was developed for power electronics application. The device with source connected field plate (FP) was fabricated, which demonstrated perfect hard breakdown characteristics. A high breakdown voltage of 740V was obtained in air ambient while gate-drain spacing Lgd and FP length LFP equaled to 20μm and 2μm respectively. Specific on-resistance of the device was 14mΩ.cm2 far below that of Si-based MOSFET with similar breakdown voltage. The influence of FP length on the on-state characteristics, off-state breakdown characteristics, and specific on-resistance RonA was discussed.
Keywords :
MOSFET; electric breakdown; electric resistance; field effect transistor switches; power electronics; DC characteristics; GaN; HEMT; MOSFET; breakdown voltage; field plate length; gate-drain spacing; off-state breakdown; on-resistance device; power electronics; power switching; voltage 740 V; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Switches; Transmission line measurements;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667651
