Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application

Author

Zhang, Minglan ; Wang, Xiaoliang ; Peng, Mingzeng ; Liu, Xinyu ; Wang, Ru

fYear

2010

Firstpage

1356

Lastpage

1358

Abstract

High breakdown voltage GaN HEMTs was developed for power electronics application. The device with source connected field plate (FP) was fabricated, which demonstrated perfect hard breakdown characteristics. A high breakdown voltage of 740V was obtained in air ambient while gate-drain spacing Lgd and FP length LFP equaled to 20μm and 2μm respectively. Specific on-resistance of the device was 14mΩ.cm² far below that of Si-based MOSFET with similar breakdown voltage. The influence of FP length on the on-state characteristics, off-state breakdown characteristics, and specific on-resistance R_onA was discussed.

Keywords

MOSFET; electric breakdown; electric resistance; field effect transistor switches; power electronics; DC characteristics; GaN; HEMT; MOSFET; breakdown voltage; field plate length; gate-drain spacing; off-state breakdown; on-resistance device; power electronics; power switching; voltage 740 V; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Switches; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667651

Filename

5667651