Title :
Compact millimeter-wave frequency doublers using slow wave structure in balun
Author :
Lai, Yu-Ann ; Chen, Chun-Nien ; Hung, Shih-Han ; Chien, Wei-Chih ; Wang, Yeong-Her
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
Compact frequency doublers for operation in millimeter-wave bands are demonstrated. These frequency doublers adopt two types of slow wave structure in Marchand balun, thereby reducing the chip size. The results demonstrate low conversion loss and good fundamental signal suppression with a wide operation bandwidth. These doublers fabricated by GaAs PHEMT process, with a size dimension of less than 0.288 mm2, could thus be obtained. In comparison with the conventional Marchand balun, more than 48% of reduction in the length of the coupled line can be achieved.
Keywords :
baluns; frequency multipliers; gallium arsenide; high electron mobility transistors; interference suppression; millimetre wave devices; slow wave structures; wide band gap semiconductors; GaAs; Marchand balun; PHEMT process; compact frequency doublers; compact millimeter-wave frequency doublers; millimeter-wave bands; signal suppression; slow wave structure; wide operation bandwidth; Capacitance; Capacitors; Couplers; Impedance matching; Loss measurement; PHEMTs; Power generation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667652