DocumentCode
1637114
Title
Compact millimeter-wave frequency doublers using slow wave structure in balun
Author
Lai, Yu-Ann ; Chen, Chun-Nien ; Hung, Shih-Han ; Chien, Wei-Chih ; Wang, Yeong-Her
Author_Institution
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fYear
2010
Firstpage
1319
Lastpage
1322
Abstract
Compact frequency doublers for operation in millimeter-wave bands are demonstrated. These frequency doublers adopt two types of slow wave structure in Marchand balun, thereby reducing the chip size. The results demonstrate low conversion loss and good fundamental signal suppression with a wide operation bandwidth. These doublers fabricated by GaAs PHEMT process, with a size dimension of less than 0.288 mm2, could thus be obtained. In comparison with the conventional Marchand balun, more than 48% of reduction in the length of the coupled line can be achieved.
Keywords
baluns; frequency multipliers; gallium arsenide; high electron mobility transistors; interference suppression; millimetre wave devices; slow wave structures; wide band gap semiconductors; GaAs; Marchand balun; PHEMT process; compact frequency doublers; compact millimeter-wave frequency doublers; millimeter-wave bands; signal suppression; slow wave structure; wide operation bandwidth; Capacitance; Capacitors; Couplers; Impedance matching; Loss measurement; PHEMTs; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667652
Filename
5667652
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