• DocumentCode
    1637114
  • Title

    Compact millimeter-wave frequency doublers using slow wave structure in balun

  • Author

    Lai, Yu-Ann ; Chen, Chun-Nien ; Hung, Shih-Han ; Chien, Wei-Chih ; Wang, Yeong-Her

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
  • fYear
    2010
  • Firstpage
    1319
  • Lastpage
    1322
  • Abstract
    Compact frequency doublers for operation in millimeter-wave bands are demonstrated. These frequency doublers adopt two types of slow wave structure in Marchand balun, thereby reducing the chip size. The results demonstrate low conversion loss and good fundamental signal suppression with a wide operation bandwidth. These doublers fabricated by GaAs PHEMT process, with a size dimension of less than 0.288 mm2, could thus be obtained. In comparison with the conventional Marchand balun, more than 48% of reduction in the length of the coupled line can be achieved.
  • Keywords
    baluns; frequency multipliers; gallium arsenide; high electron mobility transistors; interference suppression; millimetre wave devices; slow wave structures; wide band gap semiconductors; GaAs; Marchand balun; PHEMT process; compact frequency doublers; compact millimeter-wave frequency doublers; millimeter-wave bands; signal suppression; slow wave structure; wide operation bandwidth; Capacitance; Capacitors; Couplers; Impedance matching; Loss measurement; PHEMTs; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667652
  • Filename
    5667652