• DocumentCode
    163720
  • Title

    Temperature measurement using silicon piezoresistive MEMS pressure sensors

  • Author

    Frantlovic, M. ; Jokic, Ivan ; Lazio, Z. ; Vukelic, B. ; Obradov, M. ; Vasiljevic-Radovic, D.

  • Author_Institution
    Center of Microelectron. Technol., Univ. of Belgrade, Belgrade, Serbia
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    159
  • Lastpage
    161
  • Abstract
    In industrial processes, as well as in many other fields from vehicles to healthcare, temperature and pressure are the most common parameters to be measured and monitored. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, widely used in the industry in various measurement configurations. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance. However, it can be utilized for temperature measurement, thus enabling new sensor applications. In this paper a method is presented for temperature measurement using MEMS piezoresistive pressure sensors.
  • Keywords
    elemental semiconductors; microsensors; piezoresistive devices; pressure measurement; pressure sensors; silicon; temperature measurement; measurement configurations; pressure measurement performance; silicon piezoresistive MEMS pressure sensors; temperature measurement; Piezoresistance; Pressure measurement; Sensor phenomena and characterization; Silicon; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842110
  • Filename
    6842110