Title :
A 0.9V 66MHz access, 0.13um 8M(256K×32) local SONOS embedded flash EEPROM
Author :
Seo, M.K. ; Sim, S.H. ; Sim, Y.H. ; On, M.H. ; Kim, S.W. ; Cho, I.W. ; Lee, H.S. ; Kim, G.H. ; Kim, M.G.
Author_Institution :
Syst. LSI Div., Samsung Electron. Co. Ltd, Yongin, South Korea
Abstract :
In 0.13 μm CMOS logic compatible process, we implemented 256K×32bit(8Mb) SONOS embedded flash EEPROM using ATD-assisted Current Sense Amplifier (AACSA) for 0.9V(0.7V∼1.4V) low VCC application. Read operation is performed at a high frequency of 66MHz and shows a low current of typically 5mA at 66MHz operating frequency. Program operation is performed for common source array with wide I/Os(X32) by using Data-dependent Source Bias Control Scheme (DDSBCS). This novel SONOS embedded Flash EEPROM core has the cell size of 0.276um2 and the program and erase time of 20us and 20ms respectively.
Keywords :
CMOS logic circuits; CMOS memory circuits; flash memories; 0.13 micron; 0.9 V; 66 MHz; CMOS logic compatible process; Data-dependent Source Bias Control Scheme; local SONOS embedded flash EEPROM; Application specific integrated circuits; CMOS logic circuits; CMOS process; Diodes; EPROM; Frequency; Large scale integration; SONOS devices; System-on-a-chip; Voltage;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346505
