Impact of electron rebound from drain on drive current in nano-scale InGaAs MOSFETs

We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, L_g, of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate at the bottleneck. Consequently the average electron velocity at the bottleneck, v_s, decreases. This considerably diminishes the potential of the InGaAs MOSFETs for the current drivability.