DocumentCode :
1637415
Title :
A low power SiGe BiCMOS baseband circuitry for a direct conversion CMMB tuner IC
Author :
Gong, Zheng ; Chen, Bei ; Hu, Xueqing ; Shi, Yin ; Dai, Fa Foster
Author_Institution :
Technol. Res. Center, Suzhou-CAS Semicond. Integrated, Suzhou, China
fYear :
2010
Firstpage :
478
Lastpage :
481
Abstract :
An analog baseband circuitry for a China Mobile Multimedia Broadcasting (CMMB) direct conversion tuner IC is introduced in this paper. It includes an 8th order channel select filter with sharp transition band and utilizes a novel gain-bandwidth-product (GBW) extension technique in designing the low power, high speed operational amplifiers (Op-Amps) of the active-RC filter. A current steering type variable gain amplifier (VGA) is adopted to provide more than 40 dB baseband gain range and an on-chip DC offset cancellation (DCOC) circuit is designed to prevent the baseband chain from saturation due to DC offsets. The chip is fabricated in a 0.35-μm SiGe BiCMOS process and consumes 15mA from 3V supply with filter´s f-3dB at 4 MHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; amplification; analogue circuits; open area test sites; operational amplifiers; China mobile multimedia broadcasting; DC offset cancellation; active-RC filter; analog baseband circuitry; direct conversion CMMB tuner IC; gain-bandwidth-product extension technique; low power SiGe BiCMOS baseband circuitry; operational amplifiers; variable gain amplifier; Baseband; Gain; Integrated circuits; Linearity; Low pass filters; Tuners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667661
Filename :
5667661
Link To Document :
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