Title :
Pulsed power generator utilizing fast SI-thyristors for environmental applications
Author :
Ibuka, S. ; Osada, T. ; Jingushi, K. ; Suda, M. ; Nakamura, T. ; Yasuoka, K. ; Ishii, S.
Author_Institution :
Tokyo Inst. of Technol., Japan
Abstract :
Fast SI-thyristor switching systems were designed and examined for environmental applications. The authors characterized three kinds of SI-thyristor with different device structures by using an extremely low inductance testing circuit, and confirmed the superiority of punch-through and flat-anode structures for fast turn-on characteristics. In order to accomplish fast turn-on operation, they developed a fast and high current gate-driving circuit for repetitive pulsed power applications. The SI-thyristors were successfully operated with a fall time of 35 ns and a current rising rate of 9.5/spl rlarr2/10/sup 10/ A/s. To clarify technical issues for higher voltage operation, they employed three SI-thyristors stacked in series to assemble the generator, which was operated with a repetition rate of 2 kHz.
Keywords :
air pollution control; pulse generators; pulsed power supplies; pulsed power switches; semiconductor device measurement; semiconductor device testing; thyristors; 2 kHz; 35 ns; current rising rate; device structures; environmental applications; fall time; fast SI-thyristors; fast turn-on characteristics; flat-anode structures; gate-driving circuit; low inductance testing circuit; pulsed power generator; pulsed power supplies; punch-through structures; repetition rate; repetitive pulsed power applications; static induction thyristors; Anodes; Cathodes; Circuit testing; Inductance; Power electronics; Power generation; Pulse generation; Switches; Switching systems; Voltage;
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
DOI :
10.1109/PPC.1999.823801
