Title :
Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs
Author :
Tiwari, Pramod Kumar ; Dubey, Sarvesh ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., IT-BHU, Varanasi, India
Abstract :
In this paper, a short-channel subthreshold swing model for three-terminal (3T) double-gate (DG) MOSFETs with Gaussian doping profile in the vertical direction of the channel is presented. The effective conduction path effect concept of uniformly doped DG MOSFETs is utilized to incorporate the doping dependency in the present model. The effect of varying peak doping position of Gaussian profile on the subthreshold swing is studied.
Keywords :
Gaussian processes; MOSFET; doping profiles; semiconductor device models; semiconductor doping; Gaussian doping profile; asymmetric 3T double gate MOSFET; doping dependency; short-channel subthreshold swing model; three-terminal DG MOSFET; Doping profiles; Logic gates; MOSFETs; Numerical models; Semiconductor process modeling; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667663
