Thomas-Fermi method for computing the electron spectrum of highly doped quantum wires in n-Si

Author

Grimalsky, Vladimir ; Oubram, Outmane ; Koshevaya, S. ; Castrejon-M, C.

Author_Institution

CIICAp, Autonomous Univ. of State Morelos (UAEM), Cuernavaca, Mexico

fYear

2014

fDate

12-14 May 2014

Firstpage

241

Lastpage

244

Abstract

The application of TF method to calculate the electron spectrum in highly doped n-Si quantum wires is presented under finite temperatures, where the many-body effects, like exchange, are taken into account. The electron potential energy is calculated from a simple separate equation. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. Peculiarities of solving the Schrödinger equation in the case of the anisotropic effective mass are pointed out.

Keywords

Schrodinger equation; Thomas-Fermi model; electron spectra; elemental semiconductors; semiconductor quantum wires; silicon; wave functions; Schrödinger equation; Si; TF method; Thomas-Fermi method; anisotropic effective mass; electron potential energy; electron spectrum; energy sub-levels; finite temperatures; highly doped quantum wires; many-body effects; wave functions; Equations; Mathematical model; Potential energy; Quantum computing; Quantum mechanics; Silicon; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-5295-3

Type

conf

DOI

10.1109/MIEL.2014.6842132

Filename

6842132