DocumentCode
1637704
Title
Characteristics of multi-chip pulse switching flat packaged 4500-V IEGT
Author
Okamura, K. ; Endo, F. ; Atsumi, K. ; Yokokura, K.
Author_Institution
Toshiba Corp., Tokyo, Japan
Volume
2
fYear
1999
Firstpage
1492
Abstract
We have tested the switching performance of a multichip flat packaged 4500-V injection enhanced gate transistor (IEGT) for the first time. The device contains 12 or 15 chips of 15 mm by 15 mm square IEGTs and 6 chips of the same sized free wheel diodes. To examine the short pulse and rectangular pulse switching performance, special test circuits were designed and constructed. As a result, 1) quite easy gate control, and 2) excellent performance for both short pulse and rectangular pulse switching were confirmed.
Keywords
power semiconductor switches; power transistors; pulsed power switches; 15 mm; 4500 V; free wheel diodes; injection enhanced gate transistor; multi-chip pulse switching flat packaged IEGT; rectangular pulse switching performance; short pulse switching performance; switching performance testing; test circuits; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Pulse circuits; Switching circuits; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-5498-2
Type
conf
DOI
10.1109/PPC.1999.823814
Filename
823814
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