Title :
Characteristics of multi-chip pulse switching flat packaged 4500-V IEGT
Author :
Okamura, K. ; Endo, F. ; Atsumi, K. ; Yokokura, K.
Author_Institution :
Toshiba Corp., Tokyo, Japan
Abstract :
We have tested the switching performance of a multichip flat packaged 4500-V injection enhanced gate transistor (IEGT) for the first time. The device contains 12 or 15 chips of 15 mm by 15 mm square IEGTs and 6 chips of the same sized free wheel diodes. To examine the short pulse and rectangular pulse switching performance, special test circuits were designed and constructed. As a result, 1) quite easy gate control, and 2) excellent performance for both short pulse and rectangular pulse switching were confirmed.
Keywords :
power semiconductor switches; power transistors; pulsed power switches; 15 mm; 4500 V; free wheel diodes; injection enhanced gate transistor; multi-chip pulse switching flat packaged IEGT; rectangular pulse switching performance; short pulse switching performance; switching performance testing; test circuits; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Pulse circuits; Switching circuits; Thyristors; Voltage;
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
DOI :
10.1109/PPC.1999.823814
