Title :
An area-effective termination technique for PT-Trench IGBTs
Author :
Mirone, P. ; Maresca, L. ; Riccio, M. ; De Falco, G. ; Romano, Gianmarco ; Irace, A. ; Breglio, G.
Author_Institution :
Electr. Eng. & Inf. Technol, Univ. Federico II, Naples, Italy
Abstract :
In this work the use of a Semi-Insulating Polycrystalline Silicon (SIPOS)-based termination technique on PT-Trench IGBT is presented. The proposed solution has been applied to a 600V structure and the impact on the occupied area and the breakdown voltage has been evaluated by means of 2D TCAD simulations. The results of a parametric analysis on the junction depth and termination length have been compared with the case of a standard Floating Field Ring (FFR) technique, confirming the higher performances of the SIPOS termination structure combined with the Reduced Surface Field (RESURF) technique. A 52% reduction in the termination area has been demonstrated for the analyzed structure together with the slight impact of the junction depth on the breakdown voltage.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; semiconductor device breakdown; silicon; 2D TCAD simulations; FFR technique; PT-trench IGBTs; RESURF technique; SIPOS; SIPOS termination structure; Si; area-effective termination technique; breakdown voltage; floating field ring technique; junction depth parametric analysis; reduced surface field technique; semiinsulating polycrystalline silicon-based termination technique; termination length; voltage 600 V; Doping; Electric fields; Insulated gate bipolar transistors; Junctions; Leakage currents; Optimization; Standards;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842140
