Title :
Development of a manufacturable low pressure ROXNOX oxidation process [for CMOS technology]
Author :
Bilotta, Stephen ; Proctor, Dana
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
Development work was completed on a ROXNOX oxidation to harden the gate oxide against hot carriers. Although device lifetime criteria were met and exceeded, there were serious manufacturing problems which remained. These problems included nonuniform oxide, high particle counts and excessive equipment failures due to the high temperature required for the ROXNOX oxidation process. A series of equipment and process solutions resulted in a factor of 2 film uniformity improvement, a factor of 2 reduction in average particle counts and a reduction of the occurrence and magnitude of particle spikes as well as improvement in equipment availability by 20%
Keywords :
oxidation; CMOS technology; average particle counts; device lifetime criteria; equipment availability; film uniformity improvement; gate oxide; hot carriers; low pressure ROXNOX oxidation process; nonuniform oxide; particle counts; CMOS technology; Dielectrics; Furnaces; Hot carriers; Manufacturing processes; Nitrogen; Oxidation; Prototypes; Semiconductor device manufacture; Temperature;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-2053-0
DOI :
10.1109/ASMC.1994.588177
