Title :
Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering
Author :
Paskaleva, A. ; Hudec, B. ; Jancovic, P. ; Frohlich, K.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
Resistive switching (RS) effects in Pt/HfO2/TiN MIM capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.
Keywords :
MIM structures; electrodeposition; hafnium compounds; platinum; titanium compounds; MIM capacitors; MIM structures; Pt-HfO2-TiN; bottom electrode interface engineering; deposition process; dielectric thickness; electrode treatment; resistive switching effects; Dielectrics; Electrodes; Hafnium compounds; Ions; Switches; Tin;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842144
