Title :
Latent effects in digital ICs under electrical overstress pulses
Author :
Skorobogatov, Petr K. ; Epifantsev, K.A.
Author_Institution :
Nat. Res. Nucl. Univ. “MEPhI”, Moscow, Russia
Abstract :
The results of experiments on electrical overstresses (EOS) influence on digital ICs with the amplitude below the threshold of damage are presented. As a result the latent effects of additive nature were found out.
Keywords :
digital integrated circuits; electrostatic discharge; damage threshold; digital integrated circuit; electrical overstress pulses; electrical overstresses influence; latent effects; Additives; CMOS integrated circuits; Earth Observing System; Electrostatic discharges; Microelectronics; Random access memory;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842152
