XFCB: a high speed complementary bipolar process on bonded SOI

Author

Feindt, S. ; Hajjar, J.-J.J. ; Lapham, J. ; Buss, D.

Author_Institution

Analog Devices, Wilmington, MA, USA

fYear

1992

Firstpage

264

Lastpage

267

Abstract

A fabrication process was developed to obtain full, dielectrically isolated complementary bipolar transistors. Direct-wafer-bonding silicon-on-insulator and deep-trench-isolation technologies were used. Polysilicon was used as the emitter for both NPN and PNP transistors. A single layer of polysilicon was used to fabricate both transistor types. The process is characterized by a 12 V breakdown and yields transistors with a cutoff frequency of 4.5 GHz and 2.5 GHz for the NPN and PNP devices, respectively

Keywords

bipolar integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; wafer bonding; 12 V; 2.5 GHz; 4.5 GHz; XFCB; bipolar transistors; bonded SOI; complementary bipolar process; cutoff frequency; deep-trench-isolation; dielectrically isolated; direct wafer bonding; fabrication process; high speed; polysilicon; Circuits; Dielectric materials; Dielectric substrates; Dielectric thin films; Fabrication; Implants; Isolation technology; Parasitic capacitance; Plugs; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274036

Filename

274036

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1637988