Title :
Process and device modeling of LIGTs for smart power applications
Author :
Trontelj, L. ; Krivokapic, Z. ; Kregar, V.
Author_Institution :
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
Abstract :
A lateral insulated gate power transistor (LIGT) structure was developed for integration with existing low-voltage CMOS processes. Device optimization and process step modifications not influencing low-voltage process parameters are presented. Simulation and experimental results are discussed
Keywords :
CMOS integrated circuits; insulated gate bipolar transistors; power integrated circuits; power transistors; semiconductor device models; 3 micron; I-V characteristics; LIGT; device modeling; device optimization; lateral insulated gate power transistor; low-voltage CMOS processes; low-voltage process parameters; process step modifications; smart power applications; Application software; CMOS process; Cathodes; Doping profiles; Electrical resistance measurement; Insulation; Low voltage; MOSFETs; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161788
