Title :
Lifetime profile reconstruction in helium implanted silicon for planar IGBTs
Author :
Guerriero, P. ; Sanseverino, A. ; Daliento, S.
Author_Institution :
DIETI, Univ. of Naples Federico II, Naples, Italy
Abstract :
Electronic switching devices often requires some form of post processing to adjust, with high spatial resolution, the value of the recombination lifetime. The most selective killing technique used so far exploits high energy helium implantation. The main obstacle to the proper modeling of implantation effects comes from the unavailability of reliable measurement techniques able to “look” into the device to measure the local value of the lifetime. In this paper the differential technique for lifetime profile measurements is applied to materials suitable for the fabrication of planar IGBTs.
Keywords :
carrier lifetime; doping profiles; helium; insulated gate bipolar transistors; ion implantation; silicon; Si:He; differential technique; electronic switching devices; helium implanted silicon; high energy helium implantation; implantation effects; killing technique; lifetime profile measurements; lifetime profile reconstruction; measurement techniques; planar IGBT; post processing; recombination lifetime; spatial resolution; Buffer layers; Helium; Insulated gate bipolar transistors; Silicon; Spontaneous emission; Substrates; Switches;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842155